APT50GF60JU3 APT50GF60JU3 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 1-8 isotop absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v i c1 t c = 25c 75 i c2 continuous collector current t c = 90c 50 i cm pulsed collector current t c = 25c 160 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 277 w i lm rbsoa clamped inductive load current r g =11 ? t c = 25c 100 a if av maximum average forward current duty cycle=0.5 t c = 80c 30 if rms rms forward current (square wave, 50% duty) 39 a these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. c a e g v ces = 600v i c = 50a @ tc = 90c application ac and dc motor control switched mode power supplies features non punch through (npt) thunderbolt igbt ? - low voltage drop - low tail current - switching frequency up to 100 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated isotop ? package (sot-227) very low stray inductance high level of integration benefits outstanding performance at high frequency operation stable temperature behavior very rugged direct mounting to heatsink (isolated package) low junction to case thermal resistance easy paralleling due to positive tc of vcesat isotop ? buck chopper npt igbt a c g e
APT50GF60JU3 APT50GF60JU3 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 2-8 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 1ma 600 v t j = 25c 40 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 1000 a t j = 25c 2.1 2.7 v ce(on) collector emitter on voltage v ge =15v i c = 50a t j = 125c 2.2 2.8 v v ge(th) gate threshold voltage v ge = v ce , i c = 700a 4.5 5.5 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 2250 c oes output capacitance 255 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 155 pf q g total gate charge 175 q ge gate ? emitter charge 18 q gc gate ? collector charge v gs = 15v v bus = 300v i c = 50a 100 nc t d(on) turn-on delay time 29 t r rise time 118 t d(off) turn-off delay time 150 t f fall time resistive switching (25c) v ge = 15v v bus = 300v i c = 50a r g = 10 190 ns t d(on) turn-on delay time 30 t r rise time 80 t d(off) turn-off delay time 240 t f fall time 43 ns e ts total switching losses inductive switching (25c) v ge = 15v v bus = 400v i c = 50a r g = 10 3.6 mj t d(on) turn-on delay time 28 t r rise time 75 t d(off) turn-off delay time 265 t f fall time 185 ns e on turn-on switching energy 1.8 e off turn-off switching energy 2.4 e ts total switching losses inductive switching (150c) v ge = 15v v bus = 400v i c = 50a r g = 10 4.2 mj
APT50GF60JU3 APT50GF60JU3 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 3-8 diode ratings and characteristics symbol characteristic test conditions min typ max unit i f = 30a 1.6 1.8 i f = 60a 1.9 v f diode forward voltage i f = 30a t j = 125c 1.4 v v r = 600v t j = 25c 250 i rm maximum reverse leakage current v r = 600v t j = 125c 500 a c t junction capacitance v r = 200v 44 pf reverse recovery time i f =1a,v r =30v di/dt =100a/s t j = 25c 23 t j = 25c 85 t rr reverse recovery time t j = 125c 160 ns t j = 25c 4 i rrm maximum reverse recovery current t j = 125c 8 a t j = 25c 130 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 700 nc t rr reverse recovery time 70 ns q rr reverse recovery charge 1300 nc i rrm maximum reverse recovery current i f = 30a v r = 400v di/dt =1000a/s t j = 125c 30 a thermal and package characteristics symbol characteristic min typ max unit igbt 0.45 r thjc junction to case diode 1.21 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g
APT50GF60JU3 APT50GF60JU3 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 4-8 typical igbt performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 re ctangular puls e duration (se conds ) thermal impedance (c/w) figure 7, maximum effective transient thermal impedance, junction to case vs pulse duration
APT50GF60JU3 APT50GF60JU3 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 5-8
APT50GF60JU3 APT50GF60JU3 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 6-8 typical diode performance curve
APT50GF60JU3 APT50GF60JU3 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 7-8
APT50GF60JU3 APT50GF60JU3 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 8-8 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. isotop ? is a registered trademark of sgs thomson apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved. emitter gate collector anode
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